333体育官网

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Hair Removal Device
Micro-pattern Trenches IGBT for Hair Removal Device Back
 PDF

Introduction Yangjie Technology recently launched a new generation of TO-220/TO-263 packages 650V discrete IGBT. The products adopt a new generation of micro-trench process platform, greatly optimizing the device's conduction loss. The products have good parameter consistency and excellent reliability. Moreover, the devices have reduced conduction voltage and strong current-carrying capability, making them suitable for applications such as hair removal devices that require high current capacity.
Features 1. Micro-trench process platform, a highly cost-effective chip solution;
2. Voltage rating of 650V, current rating of 50A@Tc=100℃;
3. Low conduction loss, suitable for high-current applications;
4. Strong current-carrying capability, with Icm up to 300A
SPECIFICATION

DGB50N65ATS2A DGP50N65ATS2A

Related new products

N30V Trench MOSFET for PD VBUS

50uA SOD-523 Package Small Signal Zener Diode

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

Anti-reverse Rectifier Diodes for High-power Supplies

Automotive IGBT for 800V Voltage Platform PTC Heater of New Energy Vehicles

MT-W Series Three Phase Bridge Rectifier

SOD-123HE TVS Diode

SGT N80-85V Power MOSFET

New SiC MOSFET for Photovoltaic Energy Storage, OBC&Power Supply

New N40V SGT MOSFETs for Sweeper
网站地图