333体育官网

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

C2&E3 IGBT Modules for Variable-frequency Drive

High Temperature Resistant Schottky Diode

SOD-123HE Diode

Low Power SCR for Small Appliances

Constant VC ESD Product

IGBT Fast Series

MMBZ Series ESD with Voltage Regulation Characteristics

High frequency C3 IGBT Module

Micro-pattern trenches IGBT for Servo controller/frequency converter/industrial power supply

SGT N80-85V Power MOSFET
网站地图